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| SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 -JULY 2000 FEATURES FCX790A C * * * * 2W POWER DISSIPATION 6A Peak Pulse Current Excellent HFE Characteristics Low Saturation Voltages Partmarking Detail - 790A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current ** Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -50 -40 -5 -6 -2 1 2 -55 to +150 UNIT V V V A A W W C recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions when soldering surface mount components. FCX790A ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) MIN. -50 -40 -5 -0.1 -0.1 -250 -350 -450 -0.9 -0.8 300 250 200 150 100 225 24 35 600 800 TYP. MAX. UNIT V V V A A CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-30V VEB=-4V IC=-0.5A, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* MHz pF pF ns ns IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V mV mV mV V V VBE(sat) VBE(on) hFE Transition Frequency Input Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% FCX790A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 IC/IB=100 IC/IB=40 IC/IB=10 1.8 Tamb=25C 1.6 1.4 -55C +25C +100C +175C IC/IB=100 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 +100C +25C -55C VCE=2V 1.6 750 hFE - Normalised Gain hFE - Typical Gain 1.4 -55C +25C +100C +175C IC/IB=100 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 250 500 VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 -55C +25C +100C VBE(sat) v IC Single Pulse Test at Tamb=25C 1.6 1.4 IC - Collector Current (Amps) VCE=2V VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.1 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area |
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